Rahoton fasahar gyaran saman lantarki mai amfani da wutar lantarki —— Mafita mafi kyau ga saman tsabtataccen bakin karfe
I. Ayyuka da Ƙimar Muhimmi
Ayyukan asali
- Tsafta mai tsanani: ƙaiƙayin saman Ra ≤ 0.1μm (makiyar madubi), rage mannewar ƙwayoyin cuta ta hanyar Kashi 90%+
- Inganta juriyar tsatsa: fim ɗin passivation ya yi kauri ta hanyar sau 3, kuma gwajin fesa gishiri ya fi Awowi 1000 (Sau 5-8 fiye da asalin substrate)
- Rashin kunya da daidaito: narkar da ƙananan ƙwayoyin cuta masu yaduwa don cimma cikakkiyar santsi a saman ramuka masu rikitarwa
- Tsaron matakin likita: kawar da barbashin ƙarfe da aka saka a saman kuma hana gurɓatar ruwan ion na ƙarfe
Mahimman hanyoyin magance matsalar
| Maki na ciwo a masana'antu | Maganin gogewar lantarki |
| Girman ƙwayoyin cuta a cikin bututun magunguna | Ra0.08μm mai santsi sosai yana hana biofilm |
| Gurɓatar ƙarfe a cikin kayan aikin semiconductor | Cire saman Layer na lahani na 5-20μm |
| Tsarin gogewa na inji ba shi da daidaito | An daidaita dukkan saman ta hanyar amfani da na'urar lantarki (electrochemically) |
II. Ka'idar Aiki
Hanyoyi biyu na rushewar anodic da sake gina fim ɗin passivation
Tsarin matakin microscopic:
① Ana fifita narkewar ions ɗin da aka haƙa → ② an samar da Layer mai laushi na electrolyte → ③ an kare matsi ta hanyar fim ɗin passivation → ④ saman yana da faɗi sosai a matakin atomic
Hoto: Tsarin narkewar kuraje mai siffar microscopic da kuma samar da fim ɗin passivation (duba SEM)
III. Tsarin aikin tsari
Matakan sarrafa daidaito
- Kafin magani
- Rufe man shafawa na alkaline (60℃× minti 10) → Tsaftace ultrasonic → Kurkurawar ruwa mai tsarki
- Gogewar lantarki
- Electrolyte: 65% phosphoric acid + 15% sulfuric acid + 20% glycerol (60-80℃)
- Sigogi: ƙarfin lantarki 12-18V, yawan halin yanzu 20-50A/dm², lokaci Minti 5-15
- Kayan aiki: Kathode ɗin kwandon titanium yana da nisan 100-150mm daga wurin aiki
- Bayan magani
- Kurkura bayan ruwa sau uku → ultrasonication na ruwa mai tsarki → busar da nitrogen
- Ka'idojin kula da inganci
- Taurin kai: Ra ≤ 0.1μm an gano ta hanyar amfani da na'urar auna haske mai haske mai haske
- Juriyar Tsatsa: Gishirin jan ƙarfe ya hanzarta gwajin fesa gishirin acetic acid (CASS) ≥48h ba tare da canza launi ba
IV. Kwatanta da sauran tsare-tsare
| Halaye | Gogewar lantarki | Goge injina | Goge sinadarai |
| Tsaurin saman | Ra 0.02-0.1μm (ƙarshen madubi) | Ra 0.1-0.4μm (launi) | Ra 0.2-0.5μm (bawon lemu) |
| Inganta juriyar tsatsa | ★★★★★ (Kauri fim ɗin Passivation) | ★★☆☆☆(Gudummawar shiga cikin ruwa) | ★★★☆☆ (Tsatsa mai tsari ɗaya) |
| Tsarin aiki mai rikitarwa | Cikakken murfin ramin ciki/ƙananan ramuka | Samun dama yana yiwuwa ne kawai a saman waje | Zurfin ramin ba shi da tabbas |
| Zubar da kayan | Cire daidaiton cirewa na 5-20μm | Lalacewar abrasive 10-100μm | Narkewar anisotropic na 20-50μm |
| Kare Muhalli | Yawan dawo da sinadarin acid ɗin da aka zubar ya kai kashi 85% | Gurɓatar ƙura | Fitar da sinadarin nitrogen oxide |
| Babban farashi | ¥150-300/㎡ | ¥80-150/㎡ | ¥50-100/㎡ |
Shaidun da suka shafi masana'antar likitanci:
Gyaran kayan aikin tiyata ta hanyar amfani da electrolytic polishing:
- Ragowar ƙwayoyin cuta: (gogewar injina> 200 CFU/cm²)
- Lokacin tsaftacewa da tsaftacewa yana raguwa ta hanyar Kashi 40%
V. Jagorar Yanayi ta Aikace-aikace
• Wuraren da ba za a iya maye gurbinsu ba:
- ✅ Kayan aikin sarrafa magunguna (bututun busar da injin daskarewa/bututun busar da injin daskarewa)
- ✅ Tsarin ruwa mai tsarki sosai (bututun iskar gas/kogon tsarin semiconductor)
- ✅ Na'urorin likitanci da za a iya dasawa (sukurori na ƙashin baya/stent na jijiyoyin zuciya)
• Madadin tattalin arziki:
- ❌ Sassan kayan ado na yau da kullun (shawarar gyaran injina)
- ❌ Manyan sassan tsarin (babban farashi)
Kammalawa: Ginawa ta hanyar amfani da na'urar lantarki (electrolytic polishing) ya cimma nasarori biyu a fannin aiki da aminci ga bakin karfe ta hanyar daidaita saman matakin atomic tare da sake gina fim ɗin passivation. Ɗakin tsaftacewa na aji 1000 zai iya sarrafa ƙananan ramuka masu ramuka tare da diamita Φ3mm, cimma yawan iskar oxygen a saman (binciken XPS) wanda ya cika ƙa'idodin ASME BPE da FDA cGMP, yana samar da mafita mai tsafta ga masana'antu masu inganci.
Karin Bayani: Kwatanta tasirin gogewar electrolytic
Hoto: Kwatanta ƙananan saman da juriyar tsatsa tsakanin gogewar inji (hagu) da gogewar electrolytic (dama)
• Ƙarin Bayani na Fasaha
- Binciken abubuwan da ke cikin membrane (gano XPS):
- Cr₂O₃ abun ciki: 75-85% (gogewar injiniya kawai 40-60%)
- Rabon Fe/Cr: ≤0.1 (buƙatar matakin likita ≤0.3)
- Sigogi na iyaka:
- Matsakaicin daidaiton aiki: Ra 0.008μm (matakin silicon monocrystalline)
- Mafi ƙarancin aikin buɗewa: Φ zurfin rami mai zurfin 0.5mm (rabo tsakanin tsayi da diamita 10:1)
- Tsarin kirkire-kirkire:
- Pulse electrolytic polishing: rage asarar kayan aiki ta hanyar Kashi 30%
- Taimakon ƙananan zafin jiki na plasma: rage yawan amfani da makamashi ta hanyar Kashi 40%